DocumentCode :
816458
Title :
Class D voltage-switching MOSFET power amplifier
Author :
Kazimierczuk, M.K.
Author_Institution :
Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA
Volume :
138
Issue :
6
fYear :
1991
fDate :
11/1/1991 12:00:00 AM
Firstpage :
285
Lastpage :
296
Abstract :
An analysis of a class D voltage-switching tuned power amplifier is given, along with experimental results. Analytical equations are derived for performance parameters at any operating frequency normalised with respect to the resonant frequency and at any load resistance normalised with respect to the characteristic impedance of the resonant circuit. The analysis is carried out under the high loaded quality factor assumption, using Fourier series techniques. The behaviour of power MOSFETs in class D circuits for both capacitive and inductive loads is discussed in detail. It is shown that the operation above the resonant frequency (an inductive load) is preferred. The theoretical results were in good agreement with measured circuit performance parameters. The equations provide easy-to-use design tools, which can find a broad application, e.g. in designing DC/DC resonant converters and DC/AC inverters
Keywords :
Fourier analysis; insulated gate field effect transistors; power amplifiers; switching circuits; DC/AC inverters; DC/DC resonant converters; Fourier series techniques; MOSFET power amplifier; capacitive loads; class D; inductive loads; load resistance; performance parameters; resonant frequency; voltage-switching tuned power amplifier;
fLanguage :
English
Journal_Title :
Electric Power Applications, IEE Proceedings B
Publisher :
iet
ISSN :
0143-7038
Type :
jour
Filename :
103241
Link To Document :
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