Title :
Body tie placement in CMOS/SOI digital circuits for transient radiation environments
Author :
Alles, M.L. ; Kerns, S.E. ; Massengill, Lloyd W. ; Clark, J.E. ; Jones, K.L., Jr. ; Lowther, R.E.
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
The authors present criteria for the use of body ties to reduce or eliminate parasitic bipolar effects important in the transient radiation response of SOI/CMOS devices. A theoretically derived body tie spacing rule is verified using both TRIGSPICE and PISCES II with photocurrent injection capabilities. The tie spacing rule, which is independent of feature size within bounds, provides a simple guideline for design/layout for CMOS/SOI digital circuits for harsh transient radiation environment
Keywords :
CMOS integrated circuits; digital integrated circuits; integrated circuit technology; radiation hardening (electronics); semiconductor-insulator boundaries; CMOS/SOI digital circuits; PISCES II; SOI/CMOS devices; TRIGSPICE; body tie placement; body tie spacing rule; harsh transient radiation environment; parasitic bipolar effects elimination; photocurrent injection capabilities; transient radiation environments; transient radiation response; Body regions; CMOS digital integrated circuits; Dielectric devices; Dielectric substrates; Digital circuits; Guidelines; Immune system; Photoconductivity; Resistors; Silicon on insulator technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
