Title :
Freeze-out characterization of radiation hardened N+ polysilicon gate CMOS transistors
Author :
Pantelakis, Dimitris C. ; Hemmenway, Donald F. ; Van vonno, Nicolaas W. ; Sanders, Thomas J.
Author_Institution :
Harris Semiconductor, Melbourne, FL, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Freeze-out behavior of radiation hardened N+ polysilicon gate CMOS devices is studied at liquid-nitrogen temperature before and after irradiation at different dose levels. Explanations are given for the threshold voltage variations and freeze-out effects both before and after irradiation. The degree of freeze-out of the counterdope implant is controlled by temperature, applied gate potential, and applied body-to-source potential. Based on experimental results of this work, freeze-out is not significantly affected by irradiation doses, or the magnitude of the gate bias during radiation
Keywords :
CMOS integrated circuits; radiation hardening (electronics); 77 K; body-to-source potential; counterdope implant; degree of freeze-out; experimental results; freeze-out characterization; freeze-out effects; gate bias during radiation; gate potential; irradiation doses; polycrystalline Si gate transistors; polysilicon gate CMOS transistors; radiation hardened CMOS; temperature effects; threshold voltage variations; CMOS process; CMOS technology; Circuits; Cryogenics; Doping; Implants; Impurities; Radiation hardening; Temperature; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
