Title :
Optimization of on-State and Switching Performances for 15–20-kV 4H-SiC IGBTs
Author :
Tamaki, Tomohiro ; Walden, Ginger G. ; Sui, Yang ; Cooper, James A.
Author_Institution :
Renesas Technol. Corp., Takasaki
Abstract :
The 4H-SiC p-channel IGBTs designed to block 15 and 20 kV are optimized for minimum loss (on-state plus switching power) by adjusting the parameters of the JFET region, drift layer, and buffer layer, using 2-D MEDICI simulations. Switching loss exhibits a strong dependence on buffer layer thickness, doping, and lifetime due to their influence on the current tail. In contrast, drift layer lifetime has little effect on the crossover frequency at which the MOSFET and IGBT have equal loss.
Keywords :
MOSFET; insulated gate bipolar transistors; junction gate field effect transistors; 2D MEDICI simulations; IGBT; JFET region; MOSFET; SiC; buffer layer; drift layer; onstate performance optimization; switching power; voltage 15 kV to 20 kV; Buffer layers; Charge carrier lifetime; Charge carrier processes; Doping; Electron mobility; Energy loss; Insulated gate bipolar transistors; Neodymium; Switching frequency; Voltage; 4H-SiC; Device optimization; IGBT; switching frequency;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.926965
