Abstract :
A Monte Carlo model for ion implantation in crystalline SiC is developed, which can be applied to arbitrary polytypes, including but not limited to 2H-SiC, 3C-SiC, 4H-SiC, 6H-SiC, and 15R-SiC. It is shown that with optimized parameters, a semiempirical electronic stopping power model is effective in simulating the dopant profiles in both channeling and random direction implants, despite its highly anisotropic crystal structure of SiC. The effect of polytypism on the dopant profiles is also shown. The simulated dopant profiles are compared with the experimental SIMS profiles in 4H-SiC and 6H-SiC, and good agreement is obtained in both cases. Finally, the predicted dopant profiles in 15R-SiC are explored for the first time.
Keywords :
Monte Carlo methods; channelling; ion implantation; polymorphism; secondary ion mass spectra; semiconductor doping; semiconductor process modelling; silicon compounds; wide band gap semiconductors; Monte Carlo simulation; SiC; anisotropic crystal structure; arbitrary polytypes; channeling; crystalline silicon carbide; dopant profile simulation; ion implantation; polytypism effect; random direction implants; semiempirical electronic stopping power model; Anisotropic magnetoresistance; Atomic measurements; Crystallization; Electron devices; Implants; Ion implantation; Monte Carlo methods; Semiconductor process modeling; Silicon carbide; Thermal conductivity; Ion implantation; Monte Carlo (MC) simulation; polytype; silicon carbide (SiC);
