Comparison of experimental measurements of power MOSFET SEBs in dynamic and static modes

Author

Calvel, P. ; Peyrotte, C. ; Baiget, A. ; Stassinopoulos, E.G.

Author_Institution

ALCATEL ESPACE, Toulouse, France

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1310

Lastpage

1314

Abstract

A study to determine the single-event burnouts (SEBs) sensitivity for burnout of IRF-150 power MOSFETS in both static and dynamic modes in terms of LET threshold and cross section is described. The dynamic tests were conducted with a power converter which was designed for actual space application. The results were compared with static measurements which were made during the exposure to the heavy ions. The data showed that the dynamic mode was less sensitive than the static by two orders of magnitude in cross section. It was also observed that ions with a range less than 30 microns did not produce destructive burnout in the dynamic mode even when their LET exceeded the threshold value. The extent of physical MOSFET damage in the destructive, dynamic tests appeared to correlate with the ion LET and source-drain voltage

Keywords

insulated gate field effect transistors; ion beam effects; power transistors; radiation hardening (electronics); IRF-150; LET threshold; destructive burnout; dynamic mode; dynamic modes; dynamic tests; experimental measurements; heavy ion exposure; ion cross section; physical MOSFET damage; power MOSFETS; power converter; single event burnout sensitivity; source-drain voltage; static modes; Extraterrestrial measurements; MOSFET circuits; Physics; Power MOSFET; Power measurement; Switches; Switching converters; Testing; Vehicle dynamics; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124110

Filename

124110