The Effect of Gate Oxide Processes on the Performance of 4H-SiC MOSFETs and Gate-Controlled Diodes

Author

Wang, Y. ; Tang, Ke ; Khan, Tahir ; Koushik Balasubramanian, Mahalingam ; Naik, Harsh ; Wang, Wei ; Chow, T.P.

Author_Institution

Centre for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY

Volume

55

Issue

8

fYear

2008

Firstpage

2046

Lastpage

2053

Abstract

The effect of different gate oxide processes on the performance of 4H-SiC MOSFETs has been studied. These processes include different gate oxide depositions (high-temperature oxide, low-temperature oxide, and plasma-enhanced chemical vapor deposition oxide) and annealing processes (oxygen, NO, and ). Various MOS device parameters, particularly, threshold voltage, subthreshold slope, field-effect electron mobility, sheet electron carrier concentration, and Hall mobility, are correlated with various process steps.

Keywords

Hall mobility; MOSFET; semiconductor diodes; silicon compounds; wide band gap semiconductors; 4H-SiC MOSFET; Hall mobility; MOS device parameters; SiC; annealing processes; field-effect electron mobility; gate oxide depositions; gate oxide processes; gate-controlled diodes; sheet electron carrier concentration; subthreshold slope; threshold voltage; Annealing; Charge carrier processes; Chemical vapor deposition; Diodes; Electron mobility; MOS devices; MOSFETs; Plasma chemistry; Plasma devices; Threshold voltage; 4H-SiC; Field-effect mobility; gate oxide process; threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.926674

Filename

4578892