Single-event burnout of power bipolar junction transistors

Author

Titus, Jeffrey L. ; Johnson, Gregory H. ; Schrimpf, Ronald D. ; Galloway, Kenneth F.

Author_Institution

US Naval Weapons Support Center, Crane, IN, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1315

Lastpage

1322

Abstract

Experimental evidence of single-event burnout of power bipolar junction transistor (BJTs) is reported for the first time. Several commercial power BJTs were characterized in a simulated cosmic ray environment using mono-energetic ions at the tandem Van de Graaff accelerator facility at the Brookhaven National Laboratory. Most of the device types exposed to this simulated environment exhibited burnout behavior. The experimental technique, data, and results are presented, while a qualitative model is used to help explain those results and trends observed in this experiment

Keywords

bipolar transistors; ion beam effects; power transistors; radiation hardening (electronics); Brookhaven National Laboratory; experimental technique; model; mono-energetic ions; power bipolar junction transistors; simulated cosmic ray environment; single-event burnout; tandem Van de Graaff accelerator facility; Breakdown voltage; Circuit testing; Computational modeling; Cranes; FETs; Ion accelerators; MOSFETs; Power measurement; Power system modeling; Weapons;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124111

Filename

124111