Title :
Multichannel Poly-Si Thin-Film Transistors Prepared by Excimer Laser Annealing With Channel Width Comparable or Smaller Than the Grain Size
Author :
Yang, Po-Chuan ; Kuo, Ping-Sheng ; Lee, Si-Chen
Author_Institution :
Grad. Inst. of Electron. Eng., Nat. Taiwan Univ., Taipei
Abstract :
This paper presents results on low-temperature (< 500degC) multichannel poly-Si thin-film transistors (TFTs) prepared by KrF excimer laser annealing with a channel width that is comparable to or smaller than the poly-Si grain size. The cross- sectional scanning electron microscope is used to measure the effective channel width, and TCAD software is used to simulate the electron density distribution in the channel region. It is found that the TFTs with ten 40-nm-wide multichannels have superior electrical characteristics, including a higher on/off current ratio (> 107), lower leakage current (8.8 times 10-14 A), less grain boundary defects density, and a better subthreshold swing (0.45 V/dec).
Keywords :
cryogenic electronics; electron density; elemental semiconductors; excimer lasers; grain boundaries; krypton compounds; laser beam annealing; scanning electron microscopy; silicon; technology CAD (electronics); thin film transistors; Si; TCAD software; channel width; cross-sectional scanning electron microscope; electrical characteristics; electron density distribution; excimer laser annealing; grain boundary defects density; leakage current; multichannel poly-silicon thin-film transistors; size 40 nm; subthreshold swing; Annealing; Atom lasers; Density measurement; Electric variables; Grain boundaries; Grain size; Hydrogen; Leakage current; Scanning electron microscopy; Thin film transistors; Polycrystalline silicon; thin-film transistor (TFT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.925288
