• DocumentCode
    816691
  • Title

    Radiation-hardened phototransistor

  • Author

    Matzen, W.T. ; Hawthorne, R.A. ; Kilian, W.T.

  • Author_Institution
    Micro Switch Div., Honeywell Inc., Richardson, TX, USA
  • Volume
    38
  • Issue
    6
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    1323
  • Lastpage
    1328
  • Abstract
    A radiation-hardened, monolithic, silicon bipolar phototransistor has been developed and produced. Common emitter current gain at 2 mA collector current is 225 and remains above 140 after irradiation of 1 E13 n/sq cm or 1 Mrad(Si). Device photoresponse to 820 nm light decreases about 30% after 1 Mrad(Si) exposure and 55% after 1 E13 n/sq cm irradiation for typical input light levels. This phototransistor is ideal for applications requiring a radiation-hardened optocoupler
  • Keywords
    bipolar transistors; elemental semiconductors; phototransistors; radiation hardening (electronics); silicon; 106 rad; 2 mA; 820 nm; Si; collector current; photoresponse; radiation-hardened optocoupler; semiconductors; Absorption; Detectors; Impurities; Neutrons; Photodiodes; Phototransistors; Radiation hardening; Silicon; Substrates; Switches;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.124112
  • Filename
    124112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=816691