Title :
Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory
Author :
Yin, Huaxiang ; Kim, Sunil ; Lim, Hyuck ; Min, Yosep ; Chang Jung Kim ; Song, Ihun ; Park, Jaechul ; Kim, Sang-Wook ; Tikhonovsky, Alexander ; Hyun, Jaewoong ; Park, Youngsoo
Author_Institution :
Semicond. Device Lab., Samsung Adv. Inst. of Technol., Yongin
Abstract :
Currently, both high-density 3-D stacking nonvolatile (NV) memory and embedded NV memory in advanced systems on panel (SOPs) urgently demand the assistance of new and functional transition metal-oxide materials. This is to overcome serious fabrication issues encountered in the use of conventional Si or poly-crystalline Si materials, as well as to increase storage density with lower process cost. This paper reports the fully functional NV memory structure operated by an ionic amorphous oxide semiconductor with a wide energy band gap (> 3.0 eV) in a Ga2O3-In2O3-ZnO (GIZO) system under low process temperature (< 400degC) while being combined with various metal-oxide materials of Al2O3, GIZO, and Al2O3 as the electron charge´s tunneling, storage, and blocking layers, respectively. The different methods of memory programs and, especially, the unique erase characteristics caused by a much wider band gap than Si were intensively being investigated, and as a result, excellent electrical results of a large program/erase window over 3.8 V at a pulse time of 10 ms are achieved.
Keywords :
II-VI semiconductors; MIS structures; alumina; amorphous semiconductors; embedded systems; gallium compounds; indium compounds; random-access storage; thin film transistors; tunnelling; wide band gap semiconductors; zinc compounds; Al2O3; Ga2O3-In2O3-ZnO; TFT; amorphous gallium indium zinc oxide nonvolatile memory; blocking layers; electron charge tunneling; embedded NV memory; functional transition metal-oxide materials; high-density 3-D stacking nonvolatile memory; ionic amorphous oxide semiconductor; low process temperature condition; program/erase characteristics; pulse time; storage density; systems on panel; time 10 ms; wide energy band gap; Amorphous materials; Gallium compounds; III-V semiconductor materials; Indium gallium zinc oxide; Inorganic materials; Material storage; Nonvolatile memory; Photonic band gap; Semiconductor materials; Zinc oxide; Amorphous; gallium indium zinc oxide (GIZO); memory; nonvolatile (NV); oxide; program/erase (P/E); thin-film transistor (TFT);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.926727
