Title :
Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate
Author :
Lin, Gong-Ru ; Kuo, Hao-Chung ; Lin, Chi-Kuan ; Feng, Milton
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
6/1/2005 12:00:00 AM
Abstract :
A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4×10-15 W/Hz12/, and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.
Keywords :
III-V semiconductors; buffer layers; dark conductivity; gallium arsenide; indium compounds; p-i-n photodiodes; photodetectors; semiconductor device noise; semiconductor growth; 13 pA; 1550 nm; 60 mum; 7.5 GHz; GaAs; In0.53Ga0.47As; In0.53Ga0.47As p-i-n photodetector; InxGa1-xP; dark current; linearly graded metamorphic InxGa1-xP buffered GaAs substrate; noise equivalent power; optical responsivity; Buffer layers; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Lattices; Optoelectronic devices; PIN photodiodes; Photodetectors; Substrates; GaAs; InGaP; metamorphic; p-i-n photodetector;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2005.847570
