• DocumentCode
    816768
  • Title

    Ultralow leakage In0.53Ga0.47As p-i-n photodetector grown on linearly graded metamorphic InxGa1-xP buffered GaAs substrate

  • Author

    Lin, Gong-Ru ; Kuo, Hao-Chung ; Lin, Chi-Kuan ; Feng, Milton

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    41
  • Issue
    6
  • fYear
    2005
  • fDate
    6/1/2005 12:00:00 AM
  • Firstpage
    749
  • Lastpage
    752
  • Abstract
    A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.6 A/W, 3.4×10-15 W/Hz12/, and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate.
  • Keywords
    III-V semiconductors; buffer layers; dark conductivity; gallium arsenide; indium compounds; p-i-n photodiodes; photodetectors; semiconductor device noise; semiconductor growth; 13 pA; 1550 nm; 60 mum; 7.5 GHz; GaAs; In0.53Ga0.47As; In0.53Ga0.47As p-i-n photodetector; InxGa1-xP; dark current; linearly graded metamorphic InxGa1-xP buffered GaAs substrate; noise equivalent power; optical responsivity; Buffer layers; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Lattices; Optoelectronic devices; PIN photodiodes; Photodetectors; Substrates; GaAs; InGaP; metamorphic; p-i-n photodetector;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2005.847570
  • Filename
    1432961
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=816768