DocumentCode :
816778
Title :
Comments on “Theoretical Analysis of Gain-Recovery Time and Chirp in QD-SOA”
Author :
Li, Xiaoxu ; Li, Guifang
Author_Institution :
Coll. of Opt. & Photonics, Central Florida Univ., Orlando, FL
Volume :
18
Issue :
22
fYear :
2006
Firstpage :
2434
Lastpage :
2435
Abstract :
For original paper see Ben-Ezra et al., ibid., vol.17, no.9, p.1803 (2005). The authors point out that in the above letter, the rate equation model (REM) for quantum-dot (QD) semiconductor optical amplifiers (SOAs) is incorrect because the rate of carrier transition from the excited state (ES) of QD to the wetting layer (WL) was given by Nwh/tau2w, proportional to the carrier density in the WL (Nw).
Keywords :
chirp modulation; quantum dot lasers; semiconductor optical amplifiers; QD-SOA; carrier transition; chirp; gain recovery time; quantum-dot semiconductor optical amplifiers; rate equation model; wetting layer; Carrier confinement; Charge carrier density; Chirp; Current density; Electron optics; Equations; Optical waveguides; Radioactive decay; Semiconductor optical amplifiers; Stationary state;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2006.885655
Filename :
4012075
Link To Document :
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