Title :
Transient radiation hardness of the CMOSV 1.25 micron technology
Author :
Wunsch, T.F. ; Hash, G.L. ; Hewlett, F.W. ; Treece, R.K.
Author_Institution :
Sandia Nat. Lab., Albuquerque, NM, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Several devices fabricated in the AT&T/Sandia CMOSV 1.25 μm technology have been characterized for transient radiation hardness. Dose rate upset levels exceeding 109 rad(Si)/s were obtained on 16-bit microprocessor, 64 K SRAM and 256 K SRAM ICs. Experimental data on neutron irradiated parts is given. Secondary photocurrents are shown to exist in logic structures which do not have adequate p-well contact placement. Layout guidelines are developed which allow the IC designer to eliminate secondary photocurrents in a given design
Keywords :
CMOS integrated circuits; SRAM chips; VLSI; integrated circuit technology; microprocessor chips; neutron effects; radiation hardening (electronics); 1.25 micron; 16-bit microprocessor; 256 K SRAM ICs; 64 K SRAM; CMOS; CMOSV; VLSI; layout guidelines; neutron irradiated parts; secondary photocurrents; transient radiation hardness; CMOS technology; Linear particle accelerator; Microprocessors; Monitoring; Photoconductivity; Pulse measurements; Random access memory; Registers; Substrates; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
