Transient radiation hardness of the CMOSV 1.25 micron technology

Author

Wunsch, T.F. ; Hash, G.L. ; Hewlett, F.W. ; Treece, R.K.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1392

Lastpage

1397

Abstract

Several devices fabricated in the AT&T/Sandia CMOSV 1.25 μm technology have been characterized for transient radiation hardness. Dose rate upset levels exceeding 10⁹ rad(Si)/s were obtained on 16-bit microprocessor, 64 K SRAM and 256 K SRAM ICs. Experimental data on neutron irradiated parts is given. Secondary photocurrents are shown to exist in logic structures which do not have adequate p-well contact placement. Layout guidelines are developed which allow the IC designer to eliminate secondary photocurrents in a given design

Keywords

CMOS integrated circuits; SRAM chips; VLSI; integrated circuit technology; microprocessor chips; neutron effects; radiation hardening (electronics); 1.25 micron; 16-bit microprocessor; 256 K SRAM ICs; 64 K SRAM; CMOS; CMOSV; VLSI; layout guidelines; neutron irradiated parts; secondary photocurrents; transient radiation hardness; CMOS technology; Linear particle accelerator; Microprocessors; Monitoring; Photoconductivity; Pulse measurements; Random access memory; Registers; Substrates; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124122

Filename

124122