Title :
Very high characteristic temperature and constant differential quantum efficiency 1.3-μm GaInAsP-InP strained-layer quantum-well lasers by use of temperature dependent reflectivity (TDR) mirror
Author :
Kasukawa, Akihiko ; Iwai, Norihiro ; Yamanaka, Nobumitsu ; Yokouchi, Noriyuki
Author_Institution :
Res. & Dev. Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
A very high characteristic temperature T0 of 150 K (25-70°C) or 450 K (25-50°C) and an almost constant differential quantum efficiency operation in the temperature range of 25-70°C were achieved in 1.3-μm GaInAsP-InP strained-layer quantum-well (SL-QW) lasers by use of a novel temperature dependent reflectivity (TDR) mirror composed of multiple quarter-lambda thickness α-Si-SiOx dielectric films with quarter-lambda shift in the vicinity of center portion, The mechanism of high T0 and constant differential quantum efficiency were explained using the structural parameters, transparent current density and gain coefficient of a SL-QW laser that are derived experimentally. The effect of TDR mirror was confirmed by measuring the temperature dependence of net gain of a SL-QW laser with TDR mirror. It was found that less temperature dependent net gain due to the decrease of mirror loss with temperature played an important role for improving the temperature characteristics of threshold current. Almost constant differential quantum efficiency over a wide temperature range is attributed to the increase of the facet reflectivity with temperature
Keywords :
Debye temperature; III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser beams; laser mirrors; quantum well lasers; reflectivity; α-Si-SiOx dielectric films; 1.3 mum; 25 to 50 C; 25 to 70 C; GaInAsP-InP; GaInAsP-InP laser; GaInAsP-InP strained-layer quantum-well lasers; Si-SiO; differential quantum efficiency; facet reflectivity; gain coefficient; mirror loss; multiple quarter-lambda thickness; quarter-lambda shift; structural parameters; temperature; temperature characteristics; temperature dependence; temperature dependent reflectivity mirror; threshold current; transparent current density; Current density; Dielectric films; Gain measurement; Mirrors; Quantum well lasers; Reflectivity; Structural engineering; Temperature dependence; Temperature distribution; Temperature measurement;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401208
