Proposed scheme for polarization insensitive GaInNAs-based semiconductor optical amplifiers

Author

Alexandropoulos, Dimitris ; Adams, Mike J. ; Hatzopoulos, Zacharias ; Syvridis, Dimitris

Author_Institution

Dept. of Informatics & Telecommun., Univ. of Athens, Greece

Volume

41

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

817

Lastpage

822

Abstract

A novel scheme for polarization insensitive GaInNAs-based semiconductor optical amplifiers is proposed in which TE and TM polarization gain is almost equal for GaInNAs quantum wells with GaInAs barriers. The proposed scheme involves the growth of GaInAs metamorphic layers on GaAs. Based on a k · p Hamiltonian that accounts for the N-induced modifications of the bandstructure, we calculate the optical properties of GaInNAs-GaInAs quantum wells and explore the effect of GaInAs barriers on the valence band mixing effects. The TE and TM amplifier gain of GaInNAs-based semiconductor optical amplifiers with GaInAs barriers is then analyzed.

Keywords

III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; semiconductor optical amplifiers; valence bands; wide band gap semiconductors; GaInAs barriers; GaInNAs-GaInAs; GaInNAs-GaInAs quantum wells; TE polarization gain; TM polarization gain; bandstructure; metamorphic layers; semiconductor optical amplifiers; valence band mixing; Distributed feedback devices; Gallium arsenide; Laser applications; Laser feedback; Optical fiber communication; Optical polarization; Quantum well lasers; Semiconductor optical amplifiers; Tellurium; Temperature sensors; GaInAs; GaInNas; polarization insensitivity; semiconductor optical amplifiers (SOAs);

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2005.847551

Filename

1432970