DocumentCode
816967
Title
Transient radiation response of VLSI circuits: shadowing effects and pulse widths dependence in laser measurements
Author
Jönsson, M. ; Mattsson, S.
Author_Institution
SAAB Space AB, Goteborg, Sweden
Volume
38
Issue
6
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
1429
Lastpage
1433
Abstract
Transient radiation responses on VLSI-circuits of various complexities were studied for different pulse widths using both laser and accelerator sources. The shadowing effects of the incident laser light due to the metallization were also investigated. The results were in good agreement with the results from the accelerator measurements. The transmission studies show that the metal cover at the most sensitive latch-up areas on the circuits compared to the reference circuit IDT 6116 follows the VdG/laser ratio latch-up threshold values well. The large divergence (⩾20%) from 1.0 for some circuits´ VdG/laser-ratio indicates, however, that the use of only one calibration circuit for radiation assessment with a laser is unsatisfactory. The big difference in metal cover and complexity between circuits requires the use of a reference circuit with similar metal coverage as the circuit under test
Keywords
CMOS integrated circuits; VLSI; electron beam effects; integrated circuit testing; laser beam effects; metallisation; transient response; CMOS; VLSI circuits; VdG accelerator; accelerator measurements; electron irradiation; incident laser light; laser measurements; latch-up areas; latch-up threshold; metallization; pulse widths dependence; reference circuit IDT 6116; shadowing effects; transient radiation response; Circuit simulation; Circuit testing; Laboratories; Metallization; Optical pulses; Pulse circuits; Pulse measurements; Shadow mapping; Space vector pulse width modulation; Very large scale integration;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.124128
Filename
124128
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