Title :
Proton and heavy ion upsets in GaAs MESFET devices
Author :
Weatherfold, T.R. ; Tran, L. ; Stapor, W.J. ; Petersen, E.L. ; Langworthy, J.B. ; McMorrow, D. ; Abdel-Kader, W.G. ; McNulty, P.J.
Author_Institution :
SFA Inc., Landover, MD, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Proton and heavy SEU data has been obtained for devices made by several GaAs MESFET manufacturers. Proton energy dependence and proton and heavy ion upset cross sections are reported. Measurements of charge collection from latches designed with various gate widths show that charge collection depths appear deeper than the 1 μm depth expected. Critical charge does not scale linearly with area. Proton upset cross sections are reduced with increased device width
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion beam effects; proton effects; semiconductor device testing; GaAs; MESFET; SEU; charge collection; critical charge; device width; heavy ion upsets; latches; proton energy dependence; proton upset cross section; BiCMOS integrated circuits; FETs; Foundries; Gallium arsenide; Laboratories; Logic functions; MESFET integrated circuits; Neutrons; Protons; Random access memory;
Journal_Title :
Nuclear Science, IEEE Transactions on
