Undoped InP/InGaAs heterostructure insulated-gate FET´s grown by OMVPE with PECVD-deposited SiO/sub 2/ as gate insulator

Author

Martin, Eric A. ; Aina, Olaleye A. ; Iliadis, Agis A. ; Mattingly, Mike R. ; Stecker, Lisa H.

Author_Institution

Allied-Signal Aerosp. Co., Columbia, MD, USA

Volume

9

Issue

10

fYear

1988

Firstpage

500

Lastpage

502

Abstract

The fabrication and performance of InP/InGaAs insulated-gate FETs which use a heterojunction to isolate the channel electrons from the semiconductor-insulator interface are discussed. Plasma-enhanced chemical vapor deposition (PECVD) was used to deposit SiO/sub 2/ on InP to form the gate insulator. Since the device structure is undoped, channel electrons are accumulated by the gate-induced field across the insulator. Extrinsic transconductances of 130 mS/mm (300 K) and 210 mS/mm (77 K) were achieved for 1.5- mu m gate-length devices. Gate-drain breakdown voltages in excess of 20 V were also measured.<>

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; insulated gate field effect transistors; semiconductor growth; vapour phase epitaxial growth; 1.5 micron; 130 mS; 20 V; 210 mS; III-V semiconductors; OMVPE; PECVD-deposited SiO/sub 2/; SiO/sub 2/-InP-InGaAs; chemical vapor deposition; epitaxial growth; fabrication; gate insulator; gate-drain breakdown voltages; gate-induced field; gate-length; heterojunction; insulated-gate FETs; plasma enhanced CVD; transconductances; undoped device structure; Electrons; FETs; Fabrication; Heterojunctions; Indium gallium arsenide; Indium phosphide; Insulation; Plasma chemistry; Plasma devices; Semiconductor-insulator interfaces;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.17824

Filename

17824