Title :
Noncontact internal waveform measurements with picosecond time resolution on a 0.5- mu m CMOS SRAM
Author :
Pastol, Yvon ; Halbout, Jean-Marc ; May, Paul ; Compeau, Gary
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Waveform measurements at the internal nodes of a 0.5- mu m CMOS SRAM (static random-access memory), performed at room temperature and at low temperature (80 K), are presented. These measurements yield detailed information on the internal operation of the circuit, and, more precisely, on the delays whose sum constitutes the access time in this high-speed memory circuit. The waveforms are measured in a noncontact, nonintrusive fashion with a recently developed ultrafast electron-beam prober, the picosecond photoelectron scanning electron microscope.<>
Keywords :
CMOS integrated circuits; integrated circuit testing; integrated memory circuits; random-access storage; scanning electron microscope examination of materials; 0.5 micron; CMOS SRAM; access time; delays; high-speed memory circuit; internal operation; internal waveform measurements; noncontact technique; photoelectron scanning electron microscope; picosecond time resolution; static random-access memory; ultrafast electron-beam prober; Circuits; Electron beams; Pollution measurement; Probes; Propagation delay; Pulse measurements; Random access memory; Semiconductor device measurement; Time measurement; Voltage;
Journal_Title :
Electron Device Letters, IEEE
