Title :
Monolithic integration of GaAs/AlGaAs LED and Si driver circuit
Author :
Choi, Hong K. ; Mattia, John Paul ; Turner, George W. ; Tsaur, Bor-Yeu
Author_Institution :
MIT Lincoln Lab., Lexington, MA, USA
Abstract :
A GaAs/AlGaAs LED has been monolithically integrated with a Si driver circuit composed of ten MOSFETs. The LED replaces the output pad of a 2- mu m design rule, standard Si output buffer circuit, so that the overall area remains the same. By applying a stream of voltage pulses to the input of the driver circuit, the LED output has been modulated at rates exceeding 100 MHz.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optoelectronics; light emitting diodes; 100 MHz; 7 micron; GaAs-AlGaAs; LED; MOSFETs; Si driver circuit; integrated optoelectronics; monolithic IC; output modulation; semiconductors; Anodes; Driver circuits; Etching; Gallium arsenide; Light emitting diodes; MOSFET circuits; Metallization; Monolithic integrated circuits; Pulse modulation; Voltage;
Journal_Title :
Electron Device Letters, IEEE
