Title :
Ultra-low noise characteristics of millimeter-wave high electron mobility transistors
Author :
Duh, Kuang-Hann G. ; Liu, Shih-Ming J. ; Lester, L.F. ; Chao, P.C. ; Smith, Phillip M. ; Das, Makunda B. ; Lee, B.R. ; Ballingall, James
Author_Institution :
Gen. Electr. Co., Syracuse, NY, USA
Abstract :
Room-temperature noise performance of high-electron-mobility transistors (HEMTs) has been studied by correlating the microwave/millimeter-wave noise figure with lower frequency model parameters. By comparing devices fabricated from various molecular-beam epitaxially grown wafers, it is found that devices with high transconductance at low drain current generally exhibit superior noise performance. In particular, an optimal noise figure of 1.8 dB has been obtained at 60 GHz with 6.4-dB associated gain for devices from the best wafer. The low thermal noise coefficient ( theta <1) measured for these devices indicates a high carrier saturation velocity and negligible hot-electron effect.<>
Keywords :
electron device noise; high electron mobility transistors; molecular beam epitaxial growth; solid-state microwave devices; 1.8 dB; 6.4 dB; 60 GHz; EHF; HEMTs; MBE; MM wave device; drain current; high carrier saturation velocity; high electron mobility transistors; microwave device; millimeter-wave; millimetre wave operation; molecular-beam epitaxially grown wafers; optimal noise figure; thermal noise coefficient; transconductance; ultralow noise characteristics; Electrons; Frequency; HEMTs; MODFETs; Microwave devices; Millimeter wave transistors; Molecular beam epitaxial growth; Noise figure; Semiconductor device modeling; Semiconductor process modeling;
Journal_Title :
Electron Device Letters, IEEE
