Title :
105-GHz bandwidth metal-semiconductor-metal photodiode
Author :
Van Zeghbroeck, B.J. ; Patrick, William ; Halbout, Jean-Marc ; Vettiger, Peter
Author_Institution :
IBM Zurich Res. Lab., Ruschlikon, Switzerland
Abstract :
The authors report the fabrication and characterization of a metal-semiconductor-metal (MSM) Schottky-barrier photodiode with a measured impulse response shorter than 5 ps and a bandwidth of 105 GHz at a bias voltage of 0.5 V. It is shown that the experimental results are in good agreement with numeric calculations. Because of its high performance and process compatibility with GaAs FETs, this type of photodiode is very well suited for monolithic micro- and millimeter-wave optoelectronic circuits.<>
Keywords :
Schottky-barrier diodes; integrated optoelectronics; metal-semiconductor-metal structures; optical communication equipment; photodetectors; photodiodes; 105 GHz; 5 ps; MSM; Schottky-barrier; characterization; fabrication; impulse response; metal-semiconductor-metal; millimeter-wave; monolithic microwave type; optical communication; optoelectronic circuits; photodiode; process compatibility; Bandwidth; Fingers; Gallium arsenide; Laboratories; Millimeter wave circuits; Optical receivers; P-i-n diodes; Parasitic capacitance; Photodiodes; Schottky diodes;
Journal_Title :
Electron Device Letters, IEEE
