105-GHz bandwidth metal-semiconductor-metal photodiode

Author

Van Zeghbroeck, B.J. ; Patrick, William ; Halbout, Jean-Marc ; Vettiger, Peter

Author_Institution

IBM Zurich Res. Lab., Ruschlikon, Switzerland

Volume

9

Issue

10

fYear

1988

Firstpage

527

Lastpage

529

Abstract

The authors report the fabrication and characterization of a metal-semiconductor-metal (MSM) Schottky-barrier photodiode with a measured impulse response shorter than 5 ps and a bandwidth of 105 GHz at a bias voltage of 0.5 V. It is shown that the experimental results are in good agreement with numeric calculations. Because of its high performance and process compatibility with GaAs FETs, this type of photodiode is very well suited for monolithic micro- and millimeter-wave optoelectronic circuits.<>

Keywords

Schottky-barrier diodes; integrated optoelectronics; metal-semiconductor-metal structures; optical communication equipment; photodetectors; photodiodes; 105 GHz; 5 ps; MSM; Schottky-barrier; characterization; fabrication; impulse response; metal-semiconductor-metal; millimeter-wave; monolithic microwave type; optical communication; optoelectronic circuits; photodiode; process compatibility; Bandwidth; Fingers; Gallium arsenide; Laboratories; Millimeter wave circuits; Optical receivers; P-i-n diodes; Parasitic capacitance; Photodiodes; Schottky diodes;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.17833

Filename

17833