Quantitative comparison of single event upsets induced by protons and neutrons [RAM devices]

Author

Normand, Eugene ; Stapor, William J. ; McNulty, Peter ; Abdel-Kader, W.G. ; Yaktieen, M.H.

Author_Institution

Boeing Def. & Space Group, Seattle, WA, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1457

Lastpage

1462

Abstract

The SEU susceptibility of microchips induced by neutrons and protons has been examined on both experimental and theoretical grounds. Experimental energy deposition spectra in surface barrier detectors by 14 MeV neutrons are compared against theoretical predictions based on considering individual neutron reactions and using ENDF-V cross sections. These results are compared with recent SEU measurements on 3 RAM devices made separately with 67 MeV neutrons and protons

Keywords

integrated circuit testing; integrated memory circuits; neutron effects; proton effects; random-access storage; 14 MeV; 67 MeV; ENDF-V cross sections; RAM devices; SEU susceptibility; energy deposition spectra; microchips; neutron irradiation; neutron reactions; proton irradiation; single event upsets; surface barrier detectors; Costs; Detectors; Energy measurement; Neutrons; Particle beam measurements; Particle beams; Protons; Silicon; Single event transient; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124132

Filename

124132