DocumentCode
817219
Title
Determination of SEU parameters of NMOS and CMOS SRAMs
Author
McNulty, P.J. ; Bearnvais, W.I. ; Roth, D.R.
Author_Institution
Dept. of Phys. & Astron., Clemson Univ., SC, USA
Volume
38
Issue
6
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
1463
Lastpage
1470
Abstract
Procedures for determining the SEU parameters for advanced memory devices are demonstrated for CMOS and resistor-loaded NMOS SRAMs. The dimensions of the sensitive volume are either obtained from charge collection measurements on test structures or estimated from similar measurements on the SRAMs themselves. Values of the critical charge determined from simple proton measurements agree with the values obtained for three SRAMs from extensive heavy-ion data
Keywords
CMOS integrated circuits; MOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; proton effects; CMOS SRAMs; SEU parameters; advanced memory devices; charge collection measurements; critical charge; heavy-ion data; proton measurements; resistor-loaded NMOS SRAMs; test structures; Charge measurement; Circuits; Current measurement; Extraterrestrial measurements; MOS devices; Pulse amplifiers; Pulse measurements; Random access memory; Testing; Volume measurement;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.124133
Filename
124133
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