Planar, linear GaAs detector-amplifier array with an insulating AlGaAs spacing layer between the detector and transistor layers

Author

Anderson, Gordon Wood ; Papanicolaou, Nicolas A. ; Ma, Avid I. ; Mack, Ingham A G ; Modolo, John A. ; Kub, Francis J. ; Young, Charles W., Jr. ; Thompson, Phillip E. ; Boos, John B.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

9

Issue

10

fYear

1988

Firstpage

550

Lastpage

552

Abstract

Monolithic, high-speed planar, linear, parallel channel, ten-element GaAs detector-amplifier arrays with a 70- mu m detector center-to-center spacing have been fabricated using a GaAs-AlGaAs-GaAs epitaxial structure grown on semi-insulating GaAs. The AlGaAs layer provided excellent electrical isolation between the transistor and n-type photoconductor epitaxial layers. Rise and fall times of integrated detector-amplifier array channels of 650 ps and 1.1 ns, respectively, were measured at 0.84- mu m wavelength. The sensitivity of single, discrete, detector-amplifier channels was better than -34 dBm.<>

Keywords

III-V semiconductors; gallium arsenide; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; photodetectors; 0.84 micron; 1.1 ns; 650 ps; 70 micron; GaAs-AlGaAs-GaAs epitaxial structure; III-V semiconductors; detector center-to-center spacing; detector-amplifier array; electrical isolation; fall times; high-speed; insulating AlGaAs spacing layer; integrated optoelectronics; monolithic planar array; n-type photoconductor epitaxial layers; parallel channel; rise times; semiinsulating substrate; ten-element; Acoustic signal detection; Circuits; Detectors; Doping; FETs; Gallium arsenide; Gold; Insulation; Sensor arrays; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.17841

Filename

17841