Title :
1.3-μm distributed feedback laser diode with a grating accurately controlled by a new fabrication technique
Author :
Takemoto, A. ; Ohkura, Y. ; Kawama, Y. ; Nakajima, Y. ; Kimura, T. ; Yoshida, N. ; Kakimoto, S. ; Susaki, W.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
12/1/1989 12:00:00 AM
Abstract :
The coupling constant that determines the characteristics of distributed feedback laser diodes (DFB LDs) is controlled by employing the metalorganic chemical vapor deposition (MOCVD) technique and inserting a barrier layer between the active layer and the guiding layer. It is shown that the measured coupling constant is in good agreement with the designed coupling constant. Lasers with a small coupling constant have a large slope efficiency. Lasers with the above structure are expected to have a long life, comparable to that of conventional DFB LDs
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; III-V semiconductors; InGaAsP-InP; active layer; barrier layer; coupling constant; distributed feedback laser diode; fabrication technique; grating; guiding layer; metalorganic chemical vapor deposition; slope efficiency; Diode lasers; Distributed Bragg reflectors; Distributed feedback devices; Etching; Gratings; Indium phosphide; Optical control; Optical coupling; Optical device fabrication; Organic chemicals;
Journal_Title :
Lightwave Technology, Journal of
