1.3-μm distributed feedback laser diode with a grating accurately controlled by a new fabrication technique

Author

Takemoto, A. ; Ohkura, Y. ; Kawama, Y. ; Nakajima, Y. ; Kimura, T. ; Yoshida, N. ; Kakimoto, S. ; Susaki, W.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

Volume

7

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2072

Lastpage

2077

Abstract

The coupling constant that determines the characteristics of distributed feedback laser diodes (DFB LDs) is controlled by employing the metalorganic chemical vapor deposition (MOCVD) technique and inserting a barrier layer between the active layer and the guiding layer. It is shown that the measured coupling constant is in good agreement with the designed coupling constant. Lasers with a small coupling constant have a large slope efficiency. Lasers with the above structure are expected to have a long life, comparable to that of conventional DFB LDs

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; III-V semiconductors; InGaAsP-InP; active layer; barrier layer; coupling constant; distributed feedback laser diode; fabrication technique; grating; guiding layer; metalorganic chemical vapor deposition; slope efficiency; Diode lasers; Distributed Bragg reflectors; Distributed feedback devices; Etching; Gratings; Indium phosphide; Optical control; Optical coupling; Optical device fabrication; Organic chemicals;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.41632

Filename

41632