On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs

Author

Santos, Sara D dos ; Nicoletti, Talitha ; Martino, João Antonio ; Aoulaiche, Marc ; Veloso, Anabela ; Jurczak, Malgorzata ; Simoen, Eddy ; Claeys, Cor

Author_Institution

imec, Leuven, Belgium

Volume

60

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

444

Lastpage

450

Abstract

The low-frequency noise has been studied in ultrathin-buried-oxide silicon-on-insulator nMOSFETs, analyzing the impact of different silicon film thicknesses and the front-/back-channel coupling. Significant device-to-device spread has been observed in the noise performance as well as in V_th and μN features, pointing out the influence of a nonuniform silicon film thickness that also affects the quality of the Si/SiO₂ interface. The occurrence of generation-recombination centers has been ascribed to traps present not only in the silicon film but also in the front/back oxide since the Fermi level can be swept over a large fraction of the band gap, owing to the higher electrical coupling between both interfaces.

Keywords

Fermi level; MOSFET; semiconductor device noise; silicon; silicon compounds; silicon-on-insulator; Fermi level; Si-SiO₂; UTBOX SOI nMOSFET; back oxide; back-channel LF noise; back-channel coupling; band gap; device-to-device spread; electrical coupling; front oxide; front-channel LF noise; front-channel coupling; generation-recombination centers; low-frequency noise; nonuniform silicon film thickness; ultrathin-buried-oxide silicon-on-insulator; variability; Correlation; Couplings; Low-frequency noise; Performance evaluation; Silicon; Transistors; Front-/back-channel coupling; MOSFET; low-frequency (LF) noise; ultrathin buried oxide (BOX) (UTBOX);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2227749

Filename

6365803