Update on parts SEE susceptibility from heavy ions

Author

Nichols, D.K. ; Smith, L.S. ; Schwartz, H.R. ; Soli, G. ; Watson, K. ; Koga, R. ; Crain, W.R. ; Crawford, K.B. ; Hansel, S.J. ; Lau, D.D.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1529

Lastpage

1539

Abstract

Jet Propulsion Laboratory (JPL) and the Aerospace Corporation have collected a fourth set of heavy ion single event effects (SEE) test data (previous sets were reported in contribution IEEE Trans. on Nuclear Sci. in December 1985, 1987, and 1989). Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are displayed. All data are conveniently divided into two tables: one for MOS devices, and one for a shorter list of recently tested bipolar devices. In addition, a new table of data for latchup tests only (invariably CMOS processes) is given

Keywords

CMOS integrated circuits; MOS integrated circuits; bipolar integrated circuits; environmental testing; integrated circuit testing; ion beam effects; CMOS processes; IC testing; MOS devices; SEE susceptibility; bipolar devices; heavy ion single event effects; latchup; soft errors; Aerospace testing; Current measurement; Energy measurement; Guidelines; Manufacturing; Physics; Propulsion; Satellites; Single event upset; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124142

Filename

124142