Title :
Update on parts SEE susceptibility from heavy ions
Author :
Nichols, D.K. ; Smith, L.S. ; Schwartz, H.R. ; Soli, G. ; Watson, K. ; Koga, R. ; Crain, W.R. ; Crawford, K.B. ; Hansel, S.J. ; Lau, D.D.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Jet Propulsion Laboratory (JPL) and the Aerospace Corporation have collected a fourth set of heavy ion single event effects (SEE) test data (previous sets were reported in contribution IEEE Trans. on Nuclear Sci. in December 1985, 1987, and 1989). Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are displayed. All data are conveniently divided into two tables: one for MOS devices, and one for a shorter list of recently tested bipolar devices. In addition, a new table of data for latchup tests only (invariably CMOS processes) is given
Keywords :
CMOS integrated circuits; MOS integrated circuits; bipolar integrated circuits; environmental testing; integrated circuit testing; ion beam effects; CMOS processes; IC testing; MOS devices; SEE susceptibility; bipolar devices; heavy ion single event effects; latchup; soft errors; Aerospace testing; Current measurement; Energy measurement; Guidelines; Manufacturing; Physics; Propulsion; Satellites; Single event upset; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
