Comparison of experimental charge collection waveforms with PISCES calculations

Author

Knudson, A.R. ; Campbell, A.B.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1540

Lastpage

1545

Abstract

Calculations of the charge collection transient, performed using PISCES v5.0n (Aerospace modified) are compared with previous experimental measurements for energetic He, B, Si, and Fe ions incident on 1, 3, and 10 ohm-cm silicon diodes. Lumped circuit elements are used to represent resistances, capacitance, and inductance attached to the charge collection region. PISCES does not satisfactorily reproduce the changes in the charge collection waveform that occur when bias voltage, ion, or resistivity is changed

Keywords

electronic engineering computing; elemental semiconductors; ion beam effects; semiconductor device testing; semiconductor diodes; silicon; transients; 3 to 100 MeV; B; Fe ions; He; LET; PISCES calculations; Si; Si diodes; bias voltage; capacitance; charge collection transient; charge collection waveforms; inductance; ion irradiation; lumped circuit elements; resistances; Charge measurement; Circuits; Current measurement; Diodes; Electrical resistance measurement; Energy measurement; Helium; Iron; Performance evaluation; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124143

Filename

124143