DocumentCode
817706
Title
Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100-
m Stripe Width
Author
Crump, P. ; Wenzel, H. ; Erbert, G. ; Ressel, P. ; Zorn, M. ; Bugge, F. ; Einfeldt, S. ; Staske, R. ; Zeimer, U. ; Pietrzak, A. ; Tränkle, G.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
Volume
20
Issue
16
fYear
2008
Firstpage
1378
Lastpage
1380
Abstract
Many solid state laser systems rely on transverse- magnetic polarized 808-nm diode lasers, whose efficiency is limited by the transparency current of the quantum well and whose peak power is limited by facet failure. Using optimized epitaxial growth, low voltage designs, and optimized facet reflectivity, we demonstrate 70% power conversion efficiency at 80 W in 1-cm laser bars under continuous-wave (CW) test conditions. We assess peak power limits in single emitters and find that 100-mum stripe lasers roll thermally under the CW condition at 13 W without failure, then reach >50 W under 300-ns pulse condition, where they fail at internal defects.
Keywords
laser beams; laser modes; optimisation; power conversion; semiconductor lasers; semiconductor quantum wells; transparency; TM polarized laser bar; continuous-wave testing; optimized epitaxial growth; optimized facet reflectivity; passively cooled laser; power 13 W; power 55 W; power 80 W; power conversion efficiency; quantum well; semiconductor lasers; size 100 mum; solid state laser system; time 300 ns; transparency current; transverse-magnetic polarized diode laser; wavelength 808 nm; Bars; Design optimization; Diode lasers; Epitaxial growth; Low voltage; Optical design; Polarization; Power conversion; Power lasers; Solid lasers; Power conversion; quantum wells; semiconductor lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2008.926827
Filename
4579309
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