Title :
Junction Temperature Measurement of InAs Quantum-Dot Laser Diodes by Utilizing Voltage–Temperature Method
Author :
Jeong, Jung Hwa ; Kim, Kyoung Chan ; Lee, Jung Il ; Kim, Hyun Jae ; Han, Il Ki
Author_Institution :
Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul
Abstract :
Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage- temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiNx is more useful than SiO2 to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiNx instead of SiO2 as the insulating layer. As a result, ground state optical power is doubled.
Keywords :
III-V semiconductors; charge injection; excited states; ground states; indium compounds; quantum dot lasers; silicon compounds; InAs; SiN; SiO2; excited state; forward voltage-temperature method; ground state optical power; injection current; junction temperature measurement; lasing wavelength; quantum-dot laser diodes; Diodes; High speed optical techniques; Insulation; Land surface temperature; Plasma temperature; Quantum dot lasers; Silicon compounds; Stationary state; Temperature measurement; Voltage; Forward voltage–temperature ($Vhbox{–}T$ ) method; junction temperature; quantum-dot (QD) laser diodes (LDs);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.926802
