Junction Temperature Measurement of InAs Quantum-Dot Laser Diodes by Utilizing Voltage–Temperature Method

Author

Jeong, Jung Hwa ; Kim, Kyoung Chan ; Lee, Jung Il ; Kim, Hyun Jae ; Han, Il Ki

Author_Institution

Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul

Volume

20

Issue

16

fYear

2008

Firstpage

1354

Lastpage

1356

Abstract

Junction temperature of InAs quantum-dot laser diodes (LDs) is measured by utilizing a forward voltage- temperature method. Although the forward voltage decrease with junction temperature increment is low, the linear relation between forward voltage and temperature clearly occurs. It is found that SiNx is more useful than SiO₂ to keep junction temperature low. Injection current to shift the lasing wavelength from ground to excited state is increased over 200 mA by using SiNx instead of SiO₂ as the insulating layer. As a result, ground state optical power is doubled.

Keywords

III-V semiconductors; charge injection; excited states; ground states; indium compounds; quantum dot lasers; silicon compounds; InAs; SiN; SiO₂; excited state; forward voltage-temperature method; ground state optical power; injection current; junction temperature measurement; lasing wavelength; quantum-dot laser diodes; Diodes; High speed optical techniques; Insulation; Land surface temperature; Plasma temperature; Quantum dot lasers; Silicon compounds; Stationary state; Temperature measurement; Voltage; Forward voltage–temperature ($Vhbox{–}T$ ) method; junction temperature; quantum-dot (QD) laser diodes (LDs);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.926802

Filename

4579314