Hardness assurance for low-dose space applications [MOS devices]

Author

Fleetwood, D.M. ; Winokur, P.S. ; Meisenheimer, T.L.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1552

Lastpage

1559

Abstract

The authors present a method to conservatively estimate MOS hardness in space that shares the same technical basis as MIL-STD 883C, Test Method 1019.4, but permits greater latitude in part selection for low-dose space systems. Cobalt-60 irradiation at 50-300 rad(Si)/s followed by 25°C anneal is shown to provide an effective test of oxide-charge related failures at low dose rates that is considerably less conservative than Method 1019.4. For MOS devices with gate oxides thinner than 100 nm, it is shown that an elevated temperature rebound test generally is not required for systems with total dose requirements less than 5 krad(Si). For thicker gate oxides and/or higher-dose system requirements, rebound testing per Method 1019.4 generally is required to ensure that devices do not fail in space due to interface-trap effects

Keywords

CMOS integrated circuits; MOS integrated circuits; aerospace instrumentation; annealing; environmental testing; gamma-ray effects; integrated circuit testing; radiation hardening (electronics); 25 degC; MIL-STD 883C; MOS devices; MOS hardness; Test Method 1019.4; anneal; elevated temperature rebound test; gamma irradiation; interface-trap effects; low-dose space applications; oxide-charge related failures; Annealing; Circuit testing; Degradation; Electronic equipment testing; Laboratories; MOS devices; MOSFETs; Space charge; System testing; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124145

Filename

124145