DocumentCode :
817846
Title :
Estimating parameter end points for combined environments [semiconductor devices]
Author :
Namenson, Arthur
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Volume :
38
Issue :
6
fYear :
1991
fDate :
12/1/1991 12:00:00 AM
Firstpage :
1578
Lastpage :
1583
Abstract :
The hardness assurance problem of estimating electrical parameter end points in a combined environment (e.g., neutrons and total ionizing dose) using data in each environment separately is solved. The methodology applies to any other situation where several independent normally distributed variables combine to form a final parameter. The precision deteriorates only when the estimate of end points would be questionable in any event, namely, when very high confidence and probability are required but too few parts were sampled for the environment which is the major source of variation
Keywords :
Monte Carlo methods; environmental testing; radiation hardening (electronics); semiconductor device testing; Monte Carlo simulation; combined environments; electrical parameter end points; hardness assurance problem; methodology; neutrons; semiconductor devices; total ionizing dose; Degradation; Gaussian distribution; Interpolation; Mathematics; Neutrons; Parameter estimation; Semiconductor devices; Stress; Testing; Time measurement;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.124148
Filename :
124148
Link To Document :
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