Title :
Low-Cost and High-Speed SOI Waveguide-Based Silicide Schottky-Barrier MSM Photodetectors for Broadband Optical Communications
Author :
Zhu, Shiyang ; Lo, G.Q. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., A* STAR, Singapore
Abstract :
Silicon-on-insulator waveguide-based silicide Schottky-barrier metal-semiconductor-metal (MSM) photodetectors were fabricated using a simple low-temperature Si-process. Without optimization, the detector achieves a 3-dB bandwidth of ~ 7 GHz at -3-V bias and a responsivity of ~ 19 mA/W at -1-V bias, with very weak dependence on wavelength ranging from 1520 to 1620 nm. Compared to the silicide Schottky-barrier photodiode with the same NiSi2 absorber, the MSM detectors offer the benefits of high speed, large responsivity, and ease of fabrication. Approaches for optimization are addressed.
Keywords :
Schottky barriers; integrated optoelectronics; metal-semiconductor-metal structures; nickel compounds; optical communication equipment; optical fabrication; optical waveguides; optimisation; photodetectors; silicon-on-insulator; NiSi2; SOI waveguide-based silicide MSM photodetectors; Schottky-barrier; SiO2-Si:P; broadband optical communications; detector fabrication; metal-semiconductor-metal configuration; optimization; silicon optoelectronics; silicon-on-insulator waveguide; voltage -1 V; voltage -3 V; wavelength 1520 nm to 1620 nm; Bandwidth; Broadband communication; Detectors; Fabrication; Optical fiber communication; Optical waveguides; Photodetectors; Photodiodes; Silicides; Silicon on insulator technology; Metal–semiconductor–metal (MSM); Schottky-barrier; near- infrared; photodetector (PD); silicide; silicon (Si) optoelectronics;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.927876
