The on-orbit measurements of single event phenomena by ETA-V spacecraft

Author

Goka, T. ; Kuboyama, S. ; Shimano, Y. ; Kawanishi, T.

Author_Institution

High-Reliability Components Corp., Tokyo, Japan

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1693

Lastpage

1699

Abstract

The on-orbit data of single event phenomena were obtained for the CMOS static RAMs equipped in Engineering Test Satellite-V (ETS-V) in a geostationary orbit. The single event latchup and single event upset data were acquired for a period of about three years, and the effects of solar flares were observed. A comparison with the data (single event upset) of TTL SRAMs by Marine Observation Satellite-1 (MOS-1: a medium-altitude satellite) was also conducted. The Poisson distribution and the extreme-value theory (doubly exponential distribution) were adopted to analyze the data. From this analysis a decrease of the number of single events could be found during the solar maximum

Keywords

CMOS integrated circuits; SRAM chips; artificial satellites; bipolar integrated circuits; integrated circuit testing; transistor-transistor logic; CMOS static RAMs; ETS-V; Engineering Test Satellite-V; Marine Observation Satellite-1; Poisson distribution; TTL SRAMs; extreme-value theory; geostationary orbit; on-orbit measurements; single event latchup; single event phenomena; single event upset; solar flares; solar maximum; Aerospace engineering; Current measurement; Extraterrestrial measurements; Extraterrestrial phenomena; Frequency estimation; Monitoring; Read-write memory; Single event upset; Space vehicles; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124164

Filename

124164