Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor

Author

Yana Gao ; Jianhua Zhang ; Xifeng Li

Author_Institution

Key Lab. of Adv. Display & Syst. Applic. of Minist. of Educ., Shanghai Univ., Shanghai, China

Volume

11

Issue

9

fYear

2015

fDate

Sept. 2015

Firstpage

764

Lastpage

767

Abstract

We report a solution-processed a top gate indium-gallium-zinc oxide thin film transistors (IGZO TFTs) with high- k zirconium oxide (ZrOx) dielectric. Both the dielectrics and electrodes were fabricated by spin coating or screen printing. The ZrOx exhibits an amorphous structure and smooth enough to be used as a gate insulator for TFT. The TFT with maximum process temperature of 300 °C had a saturation mobility of 0.2 cm ²/V·s, an on/off ratio of 10³, a threshold voltage of 0.3 V, and the subthreshold swing is 0.34 V/decade.

Keywords

electrodes; gallium compounds; indium compounds; insulators; spin coating; thin film transistors; zinc compounds; zirconium compounds; InGaZnO; ZrO; electrodes; high- k dielectric; screen printing; solution-processed zirconium oxide gate insulators; spin coating; temperature 300 C; thin-film transistor; voltage 0.3 V; Dielectrics; Electrodes; Films; High K dielectric materials; Logic gates; Printing; Thin film transistors; Solution-processed; thin-film transistors (TFTs); top gate; zirconium oxide (ZrOx);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2015.2438955

Filename

7115033