Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

Author

Ferlet-Cavrois, V. ; Paillet, P. ; McMorrow, D. ; Torres, A. ; Gaillardin, M. ; Melinger, J.S. ; Knudson, A.R. ; Campbell, A.B. ; Schwank, J.R. ; Vizkelethy, G. ; Shaneyfelt, M.R. ; Hirose, K. ; Faynot, O. ; Jahan, C. ; Tosti, L.

Author_Institution

CEA/DIF, France

Volume

52

Issue

6

fYear

2005

Firstpage

2104

Lastpage

2113

Abstract

This paper investigates the transient response of 50-nm gate length fully and partially depleted SOI and bulk devices to pulsed laser and heavy ion microbeam irradiations. The measured transient signals on 50-nm fully depleted devices are very short, and the collected charge is small compared to older 0.25-μm generation SOI and bulk devices. We analyze in detail the influence of the SOI architecture (fully or partially depleted) on the pulse duration and the amount of bipolar amplification. For bulk devices, the doping engineering is shown to have large effects on the duration of the transient signals and on the charge collection efficiency.

Keywords

MOSFET; ion beam effects; laser beam effects; nanoelectronics; semiconductor device measurement; silicon-on-insulator; transient response; 50 nm; NMOS device; Si; bipolar amplification; bulk transistors; deca-nanometer devices; doping engineering; fully depleted SOI; gate length; heavy ion microbeam irradiation; partially depleted SOI; pulsed laser irradiation; transient current; transient pulse direct measurement; transient response; Aerospace electronics; Circuits; Costs; Degradation; Laboratories; Optical pulses; Production; Pulse amplifiers; Pulse measurements; Space technology; Collected charge; SOI and bulk transistors; heavy ion; pulsed laser; transient current;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860682

Filename

1589169