Comparison of heavy ion and proton induced combinatorial and sequential logic error rates in a deep submicron process

Author

Gadlage, Matthew J. ; Eaton, Paul H. ; Benedetto, Joseph M. ; Turflinger, Thomas L.

Author_Institution

NAVSEA, Crane, IN, USA

Volume

52

Issue

6

fYear

2005

Firstpage

2120

Lastpage

2124

Abstract

Digital single event transients induced in combinatorial logic are quickly becoming a significant error source as circuit feature sizes shrink and digital circuits operate faster. In this paper, we are able to compare the combinatorial logic error rate to the sequential logic error rate in both heavy ion and proton environments in a simple digital circuit created in a 0.18 μm CMOS technology. We are able to do this by comparing data from two unique test chips.

Keywords

CMOS digital integrated circuits; combinational circuits; ion beam effects; proton effects; sequential circuits; 0.18 micron; CMOS technology; combinational logic circuits; deep submicron process; digital circuits; digital single event transients; error source; heavy ion radiation effects; proton induced combinatorial logic error rate; proton induced sequential logic error rates; proton radiation effects; sequential logic circuits; CMOS logic circuits; CMOS technology; Clocks; Error analysis; Flip-flops; Frequency; Latches; Protons; Sequential circuits; Testing; Combinational logic circuits; ion radiation effects; proton radiation effects; sequential logic circuits;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860678

Filename

1589171