The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

Author

Warren, Kevin M. ; Weller, Robert A. ; Mendenhall, Marcus H. ; Reed, Robert A. ; Ball, Dennis R. ; Howe, Christina L. ; Olson, Brian D. ; Alles, Michael L. ; Massengill, Lloyd W. ; Schrimpf, Ronald D. ; Haddad, Nadim F. ; Doyle, Scott E. ; McMorrow, Dale

Author_Institution

Inst. for Space & Defense Electron., Nashville, TN, USA

Volume

52

Issue

6

fYear

2005

Firstpage

2125

Lastpage

2131

Abstract

Heavy ion irradiation was simulated using a Geant4 based Monte-Carlo transport code. Electronic and nuclear physics were used to generate statistical profiles of charge deposition in the sensitive volume of an SEU hardened SRAM. Simulation results show that materials external to the sensitive volume can affect the experimentally measured cross-section curve.

Keywords

Monte Carlo methods; SRAM chips; ion beam effects; radiation hardening (electronics); semiconductor device models; Geant4 based Monte-Carlo transport code; MRED; charge deposition; electronic physics; heavy ion irradiation; heavy ion single event upset cross-section measurements; high-density SEU hardened SRAM; nuclear physics; nuclear reactions; statistical profiles; Circuits; Discrete event simulation; Energy measurement; Ionization; Laboratories; Nuclear electronics; Nuclear physics; Nuclear power generation; Random access memory; Single event upset; Cross section; Geant4; MRED; single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860677

Filename

1589172