Title :
Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs
Author :
Castellani-Coulié, K. ; Munteanu, D. ; Autran, J.L. ; Ferlet-Cavrois, V. ; Paillet, P. ; Baggio, J.
Author_Institution :
UMR CNRS, Univ. de Provence, Marseille, France
Abstract :
The sensitivity to heavy ions of double-gate (DG) transistors is evaluated by numerical simulation and extensively compared with the response of single-gate (SG) partially-depleted and fully-depleted SOI devices. The study of bipolar amplification versus LET and track location shows that DG are less sensitive than SG with similar structure parameters. Moreover, in order to understand the downscaling impact on the DG sensitivity to heavy ions, the influence on the bipolar gain of various electrical and geometrical structure parameters is thoroughly analyzed.
Keywords :
MOSFET; ion beam effects; semiconductor device measurement; semiconductor device models; LET; bipolar amplification; bipolar gain; double gate sensitivity; double-gate MOSFET; double-gate transistor; downscaling impact; electrical parameter; geometrical structure parameter; heavy-ion irradiation; numerical simulation; track location; Analytical models; Doping; Electrodes; Electrostatics; Fluctuations; MOSFETs; Numerical simulation; Radiation hardening; Semiconductor films; Silicon; Bipolar gain; MOSFET; double-gate transistor; single-gate SOI transistor;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860680
