• DocumentCode
    818315
  • Title

    Rate predictions for single-event effects - critique II

  • Author

    Petersen, E.L. ; Pouget, V. ; Massengill, L.W. ; Buchner, S.P. ; McMorrow, D.

  • Author_Institution
    IXL-CNRS UMR, Talence, France
  • Volume
    52
  • Issue
    6
  • fYear
    2005
  • Firstpage
    2158
  • Lastpage
    2167
  • Abstract
    The concept of charge efficacy is introduced as a measure of the effectiveness of incident charge for producing single-event upsets. Efficacy is a measure of the single-event upset (SEU) sensitivity within a cell. It is illustrated how the efficacy curve can be determined from standard heavy-ion or pulsed laser SEU cross-section data, and discussed how it can be calculated from combined charge collection and circuit analysis. Upset rates can be determined using the figure of merit approach, and values determined from the laser cross-sections or from the mixed-mode simulations. The standard integral rectangular parallel-piped (IRPP) method for upset rate calculation is re-examined assuming that the probability of upset depends on the location of the hit on the surface. It is concluded that it is unnecessary to reformulate the IRPP approach.
  • Keywords
    DRAM chips; SRAM chips; laser beam effects; proton effects; radiation hardening (electronics); DRAM; SRAM; charge efficacy; circuit analysis; figure of merit; mixed-mode simulation; picosecond pulsed laser; pulsed laser SEU cross-section data; single event simulation; single-event effects; single-event upset sensitivity; standard heavy-ion cross section data; standard integral rectangular parallel-piped method; upset rate calculation; Charge measurement; Current measurement; Extraterrestrial measurements; Optical pulses; Orbital calculations; Probability; Pulse circuits; Pulse measurements; Shape; Single event upset; Figure of merit (FOM); SEU rates; heavy ion; picosecond pulsed laser; proton; single event simulation; single event upset (SEU);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.860687
  • Filename
    1589177