The effect of metallization Layers on single event susceptibility

Author

Kobayashi, A.S. ; Ball, D.R. ; Warren, K.M. ; Reed, R.A. ; Haddad, N. ; Mendenhall, M.H. ; Schrimpf, R.D. ; Weller, R.A.

Author_Institution

Vanderbilt Univ., Nashville, TN, USA

Volume

52

Issue

6

fYear

2005

Firstpage

2189

Lastpage

2193

Abstract

We investigate the effects of metallization layers on the radiation hardness of an epitaxial CMOS memory technology using Monte Carlo simulations. A geometrically and compositionally realistic three-layer metallization scheme is employed in detailed radiation transport simulations that include contributions from discrete δ-rays and nuclear reactions. The presence of high-Z plugs used to connect different metallization layers can have a significant effect on the single-event sensitivity depending on the location of the high-Z material relative to the sensitive region of the underlying device.

Keywords

CMOS integrated circuits; CMOS memory circuits; Monte Carlo methods; integrated circuit metallisation; radiation hardening (electronics); semiconductor device metallisation; semiconductor device models; Monte Carlo simulations; compositionally realistic three-layer metallization scheme; delta-rays; epitaxial CMOS memory technology; high-Z material; high-Z plugs; metal-oxide semiconductor; metallization layers; nuclear reactions; radiation hardness; radiation transport simulations; single-event sensitivity; Aluminum; CMOS technology; Circuit simulation; Inorganic materials; Integrated circuit interconnections; Integrated circuit metallization; Plugs; Radiation effects; Solid modeling; Tungsten; Energy deposition; Geant4; Monte Carlo simulation; ion track; metal-oxide semiconductor (MOS); metallization layers; radiation effects; single-event effects; tungsten;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860688

Filename

1589181