Title :
Monte Carlo simulations of high-speed InSb-InAlSb FETs
Author :
Herbert, D.C. ; Childs, P.A. ; Abram, Richard A. ; Crow, G.C. ; Walmsley, M.
Author_Institution :
Semicond. Device Res. Group, Univ. of Birmingham, UK
fDate :
6/1/2005 12:00:00 AM
Abstract :
Self consistent Monte Carlo simulations which include impact ionization are used to study the high-speed potential of InSb field-effect transistors. It is found that the impact ionization has a strong influence on the performance of InSb for high speed. The ionization leads to a high electron drift velocity and substrate bias can be used to extract the holes which are generated in the channel. Residual hole density within the channel, however, limits the maximum speed. The substrate bias and buffer doping are critical for extracting holes from the channel without inducing excess ionization. Simulations yield a peak cutoff frequency of 820 GHz with a 0.03125-μm gate, a source to drain voltage of 0.58, and a sheet doping density of 1.7×1012 cm-2.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; field effect transistors; impact ionisation; indium compounds; submillimetre wave transistors; 0.58 V; 31.25 nm; 820 GHz; InSb-InAlSb; MODFET; Monte Carlo simulations; buffer doping; electron drift velocity; field-effect transistors; high-speed response; impact ionization; residual hole density; substrate bias; Doping; Electron mobility; FETs; HEMTs; Hot carriers; Impact ionization; Leakage current; MODFETs; Monte Carlo methods; Photonic band gap; High-speed response; InSb; MODFET; Monte Carlo simulation; impact ionization; low power;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.848115