Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers

Author

Wei, S.C. ; Su, Y.K. ; Chang, S.J. ; Chen, Shi-Ming ; Li, Wen-Liang

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

Volume

52

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

1104

Lastpage

1109

Abstract

Nitride-based light emitting diodes (LEDs) separately prepared with a conventional single low-temperature (LT) GaN nucleation layer and multiple GaN-SiN nucleation layers were both prepared. It was found that we could reduce defect density and thus improve crystal quality of the GaN-based LEDs by using multiple GaN-SiN nucleation layers. With a 20-V applied reverse bias, it was found that the reverse leakage currents measured from the LED with a single LT GaN nucleation layer and the one with 10-pair GaN-SiN nucleation layers were 1.5×10^-4 and 2.5×10^-6 A, respectively. It was also determined that we could use the multiple GaN-SiN nucleation layers to enhance the output intensity of near ultraviolet (UV) LEDs and to improve the reliability of nitride-based LEDs.

Keywords

III-V semiconductors; gallium compounds; leakage currents; light emitting diodes; nucleation; quantum well devices; semiconductor device reliability; semiconductor quantum wells; silicon compounds; 1.5E-4 A; 2.5E-6 A; 20 V; GaN-SiN; MQW LED; crystal quality; defect density; leakage currents; light emitting diodes; near ultraviolet LED; nitride-based LED; nucleation layers; reliability; Electrostatic discharge; Epitaxial growth; Epitaxial layers; Gallium nitride; Lattices; Leakage current; Light emitting diodes; Quantum well devices; Silicon compounds; Substrates; Electrostatic discharge (ESD); GaN; light emitting diodes (LEDs); multiple GaN–SiN nucleation layers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.848085

Filename

1433102