Title :
High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC
Author :
Jessen, G.H. ; Fitch, R.C. ; Gillespie, J.K. ; Via, G.D. ; Moser, N.A. ; Yannuzzi, M.J. ; Crespo, A. ; Sewell, J.S. ; Dettmer, R.W. ; Jenkins, T.J. ; Davis, R.F. ; Yang, Jian ; Khan, Muhammad Asad ; Binari, S.C.
Author_Institution :
Air Force Res. Lab., Wright-Patterson, OH, USA
Abstract :
High electron mobility transistors (HEMTs) were fabricated from AlGaN/GaN on semi-insulating SiC substrates with excellent performance and high yield. The devices had 0.14 μm T-gates with a total width of 300 μm. Extrinsic, unpassivated peak performance values for these HEMTs include transconductance of 338 mS/mm, maximum drain current of 1481 mA/mm, unity current gain cutoff frequency of 91 GHz, and maximum frequency of oscillation of 122 GHz. Saturated CW power measurements of these devices at 10 GHz result in 4.6 W/mm with PAE at 46% when optimized for power and 3.0 W/mm with PAE at 65% when optimized for efficiency.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs; 0.14 micron; 10 GHz; 122 GHz; 300 micron; 338 mS/mm; 46 percent; 65 percent; 91 GHz; AlGaN-GaN; HEMTs; SiC; T-gates; efficiency optimization; extrinsic unpassivated peak performance values; high yield; maximum drain current; maximum frequency of oscillation; power optimization; saturated CW power measurements; semi-insulating SiC substrates; small signal S-parameters; total width; transconductance; unity current gain cutoff frequency; Aluminum gallium nitride; Cutoff frequency; Fabrication; Gallium nitride; HEMTs; Laboratories; MODFETs; Ohmic contacts; Silicon carbide; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.818816
