Dynamic current-voltage characteristics of III-N HFETs

Author

Koudymov, A. ; Simin, G. ; Khan, M. Asif ; Tarakji, A. ; Gaska, R. ; Shur, M.S.

Author_Institution

Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA

Volume

24

Issue

11

fYear

2003

Firstpage

680

Lastpage

682

Abstract

A comparative study of the dynamic current-voltage (DI-V) characteristics of III-N heterojunction and double heterojunction field-effect transistors (HFETs and DHFETs) reveals that the current and RF power collapse in HFETs arise from modulation of device series resistances under large input signal. A model based on space-charge limited current through the depletion regions formed at the gate edges due to the charge trapping explains the DI-V behavior and other observations related to the RF current collapse in III-N HFETs.

Keywords

III-V semiconductors; aluminium compounds; characteristics measurement; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device models; space-charge-limited conduction; wide band gap semiconductors; AlGaN-InGaN-GaN; GaN-AlGaN; HEMTs; III-N HFETs; RF power collapse; charge trapping; current collapse; depletion regions; double heterojunction field-effect transistors; dynamic current-voltage characteristics; large input signal; series resistance modulation; space-charge limited current; Aluminum gallium nitride; Current-voltage characteristics; DH-HEMTs; Electron traps; Gallium nitride; HEMTs; MODFETs; Monitoring; Radio frequency; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.818889

Filename

1242326