Parameterization of neutron-induced SER in bulk SRAMs from reverse Monte Carlo Simulations

Author

Wrobel, Frédéric ; Iacconi, Philibert

Author_Institution

LPES-CRESA, Univ. de Nice-Sophia Antipolis, Nice, France

Volume

52

Issue

6

fYear

2005

Firstpage

2313

Lastpage

2318

Abstract

We used a reverse Monte Carlo method for calculating SEU cross section within the RPP approximation. The method allows reducing calculation times and accounting for long range particles which may be involved in a failure even if produced far from the sensitive volume. A global parameterization of the Soft Error Rate is given as a function of the sensitive volume size and the critical charge. This parameterization allows obtaining quickly the SER of a generic structure, which may be used as a useful guideline.

Keywords

Monte Carlo methods; SRAM chips; neutron effects; radiation hardening (electronics); sensitivity analysis; RPP approximation; SEU cross section; Soft Error Rate; bulk SRAMs; generic structure; neutron-induced SER; reverse Monte Carlo simulations; Atomic measurements; Computational modeling; Error analysis; Guidelines; Monte Carlo methods; Neutrons; Nuclear power generation; Random access memory; Shape; Single event upset; Monte Carlo method; neutron; nuclear reactions; reverse Monte Carlo method; single event upset; soft error rate;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860751

Filename

1589201