• DocumentCode
    818645
  • Title

    Comprehensive study of drain breakdown in MOSFETs

  • Author

    Li, Junjun ; Li, Hongmei ; Barnes, Ryan ; Rosenbaum, Elyse

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
  • Volume
    52
  • Issue
    6
  • fYear
    2005
  • fDate
    6/1/2005 12:00:00 AM
  • Firstpage
    1180
  • Lastpage
    1186
  • Abstract
    MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout. CDB,CGD,Rsub, and Rgate must be extracted in order to predict the device trigger voltage under subthreshold, non-dc conditions. Substrate resistance is modeled with a simple, semi-empirical equation.
  • Keywords
    MOSFET; semiconductor device breakdown; semiconductor device models; MOSFET; avalanche breakdown; breakdown voltage; drain breakdown; electrostatic discharge; overvoltage protection; semi-empirical equation; semiconductor device modeling; substrate resistance; trigger voltage; Breakdown voltage; Circuit testing; Electric breakdown; Electrostatic discharge; Fingers; MOSFETs; Protection; Silicides; Voltage control; Voltage measurement; Avalanche breakdown; MOSFETs; electrostatic discharge; overvoltage protection; semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2005.848858
  • Filename
    1433112
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=818645