Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI

Author

Chen, Tianbing ; Sutton, Akil K. ; Bellini, Marco ; Haugerud, Becca M. ; Comeau, Jonathan P. ; Liang, Qingqing ; Cressler, John D. ; Cai, Jin ; Ning, Tak H. ; Marshall, Paul W. ; Marshall, Cheryl J.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

52

Issue

6

fYear

2005

Firstpage

2353

Lastpage

2357

Abstract

Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible silicon-on-insulator (SOI) are investigated for the first time. Proton irradiation at 63 MeV is found to introduce base leakage current at low base-emitter voltage, delay the onset of Kirk effect at high injection, and increase the frequency response of SiGe HBTs on SOI. The latter two effects are in contrast to those found in conventional bulk SiGe HBTs. Proton irradiation also generates positive fixed oxide and interface charge in the buried oxide, which alters both M-1 and BV_CEO in the SiGe HBT by modulating the electric field in the collector region.

Keywords

CMOS integrated circuits; Ge-Si alloys; buried layers; heterojunction bipolar transistors; leakage currents; proton effects; semiconductor heterojunctions; silicon-on-insulator; 63 MeV; CMOS-compatible silicon-on-insulator; Kirk effect; SiGe; buried oxide; electric field; interface charge; leakage current; low base-emitter voltage; positive fixed oxide; proton radiation effects; vertical SiGe HBTs; Delay effects; Frequency response; Germanium silicon alloys; Heterojunction bipolar transistors; Kirk field collapse effect; Leakage current; Low voltage; Proton radiation effects; Silicon germanium; Silicon on insulator technology; HBT; SOI; SiGe; radiation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860726

Filename

1589207